장비안내
Si BEOL & GaN MPW
- 장비아이디 FS-SP10
- 장비명 Endura Sputter
- Model Endura 5500
- Maker APPLIED MATERIALS
- 담당자 박성민
- 연락처 031-546-6232
- E-Mail sungmin.park@kanc.re.kr
- 상 태 ● (가동중)
적용가능한 기판 정보
O (가능) / △ (협의필요) / X (불가능)
| 기판 종류 | 기판 Size | 기판 Type | 기판 두께 | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Si | III-V | Glass | Flex | 조각 | 2" | 4" | 6" | 8" | 12" | 플랫 | 노치 | Normal | Special |
| O | X | X | X | X | X | X | X | O | X | X | O | O | X |
장비사양(Hardware Specification)
ㆍ General Information
- Technology : PVD
- Platform Type : ENDURA
ㆍ Wafer Specification
- Wafer Size : 200mm
- Wafer Shape : SNNF (Semi Notch No Flat)
ㆍ Ultra-high Vacuum PVD chambers: 10-9 torr
- Chamber Type / Location
ㆍ Transfer Chamber
- Position1 : IMP Ti
- Position2 : HP+ TxZ (TiN)
- Position3 : SIP EnCoRe Cu
- Position4 : SIP EnCoRe Ta(N)
- Robot : HP
ㆍ Buffer Chamber
- Position A : Pass_Thru
- Position B : Clear Lid (Quartz)
- Position C : Reactive Preclean
- Position D : Preclean
- Position E : Orienter & Standard Degas
- Position F : Orienter & Standard Degas
- Robot : HP
ㆍ Buffer Chamber
공정성능(Process Specification)
ㆍ IMP Ti Process (200℃)
- Depo Rate: ~ 700Å/min
- Uniformity WIW ≤ 6% & WtW : ≤ 4% @ 1-sigma
- Resistivity : ~70 μΩ-㎝
- Side Step Coverage: ≥10 %
- Bottom Step Coverage: ≥ 50%
ㆍ MOCVD TiN Process (400℃)
- Resistivity : ~240 μΩ-㎝ @ 2x50Å
- Side/Bottom Step coverage : ≥ 85%
ㆍ SIP EnCoRe Cu Process (R.T)
- Uniformity WIW ≤ 5% & WtW : ≤ 3% @ 1-sigma
- Resistivity : ~3.0 μΩ-㎝
- Side Step Coverage: ≥5 %
- Bottom Step Coverage: ≥ 15%
ㆍ SIP EnCoRe Ta(N) Process (R.T)
- Uniformity WIW ≤ 6% & WtW : ≤ 4% @ 1-sigma
- Ta Resistivity : ~200 μΩ-㎝
- TaN Resistivity : ~300 μΩ-㎝
- Side Step Coverage: ≥10 %
- Bottom Step Coverage: ≥ 35%
ㆍ Pre-clean Process
- Etch Rate : 5.0Å/sec
활용분야(Application)
ㆍ Metal Layer Deposition for semiconductor
- Pre-clean: Remove of native oxide
- Barrier Metal (Ti/TiN)
- CuBS (Cu Barrier (TaN/Ta & Cu Seed)
- Ti, TiN, Cu, Ta, TaN Deposition
