장비안내
Si BEOL & GaN MPW
- 장비아이디 FS-SP20
- 장비명 Evatec Sputter
- Model CLUSTERLINEⓡ200 II
- Maker EVATEC
- 담당자 박성민
- 연락처 031-546-6232
- E-Mail sungmin.park@kanc.re.kr
- 상 태 ● (가동중)
적용가능한 기판 정보
O (가능) / △ (협의필요) / X (불가능)
| 기판 종류 | 기판 Size | 기판 Type | 기판 두께 | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Si | III-V | Glass | Flex | 조각 | 2" | 4" | 6" | 8" | 12" | 플랫 | 노치 | Normal | Special |
| O | X | X | X | X | X | X | X | O | X | X | O | O | X |
장비사양(Hardware Specification)
ㆍ General Information
- Technology : PVD
- Platform Type : CLN200II
ㆍ Wafer Specification
- Wafer Size : 200mm
- Wafer Shape : SNNF (Semi Notch No Flat)
ㆍ Chamber Type / Location
- Load Lock Chamber
- Transfer Chamber
- PM 2: ICP Soft-etch Module
- PM 3: PVD Module(Ti/TiN)
- PM 4: PVD Module(Al:Cu(0.5%))
- PM 5: PVD Module(Ti/TiN)
- PM 6: PVD HIS Module (Ti)
ㆍ Process Gas : N2, Ar
공정성능(Process Specification)
ㆍ Soft Etch Process
- Uniformity WIW ≤ 6% & WtW : ≤ 4% @ 1-sigma
- Etch Rate : ~2.0Å/sec
ㆍ Ti Process
- Depo Rate: ~ 700Å/min
- Uniformity WIW ≤ 6% & WtW : ≤ 4% @ 1-sigma
- Resistivity : ~90 μΩ-㎝
ㆍ TiN Process
- Uniformity WIW ≤ 6% & WtW : ≤ 4% @ 1-sigma
- Resistivity : ~200 μΩ-㎝
ㆍ Al(0.5%Cu) Process
- Uniformity WIW ≤ 6% & WtW : ≤ 4% @ 1-sigma
- Resistivity : ~2.9 μΩ-㎝
활용분야(Application)
ㆍ Metal Layer Deposition for semiconductor
- Soft-Etch : Remove of native oxide
- Al Metal Interconnection
- Ti, TiN, Al:Cu(0.5%) Deposition
